The multiple angle laser ellipsometer provides film thickness, refractive index and absorption index at the HeNe laser wavelength 632,8 nm with an extraordinary precision and accuracy. It can be utilized to characterize single films, multiple layer stacks and bulk materials.
Applications:
■ Microelectronics
■ Photovoltaic
Product's Feature
■ High stability and accuracy
■ Laser wavelength 632.8 nm
■ Goniometer with angles of incidence set in 5º steps
■ Multiple angle measurements
■ Large material database
■ Fully integrated support of multiple angle measurements for more complex applications and absolute thickness
■ Fast and comfortable measurement at a selectable, application specific single angle of incidence
Technique Specification
■ Precision of ψ, Δ at 90° (transmission) position: δ(ψ)=0.002°, δ(Δ)=0.002°
■ Long term stability: δ(ψ)=±0.1°, δ(Δ)=±0.1°
■ Precision of film thickness: 0.01nm for 100 nm SiO2 on Si
■ Precision of refractive index: 0.0005 for 100 nm SiO2 on Si
Typical Customer:
American,Europe and Asia and so on.
